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Wafer Bonding. Springer Series in Materials Science, Band 75

   von M. Alexe, U. Gösele

buch.de-Verkaufsrang:
ISBN-10:
3-540-21049-0
ISBN-13:
978-3-540-21049-8
Erschienen:
05.2004
Ist nicht mehr lieferbar.
Aus der Reihe:
«Springer Series in Materials Science»
Einband:
gebunden
Sonstiges:
XVIII, w. 393 figs.
Seitenzahl:
499
Gewicht:
845 g
Erschienen bei:
Springer
Herausgeber: M. Alexe Mitarbeiter: M. Alexe Herausgeber: U. Gösele Mitarbeiter: U. Gösele

Kurzbeschreibung

During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information. TOC:Direct Bonding, Fusion Bonding, Anodic Bonding, Wafer Bonding: A Historical Patent Picture of the Worldwide Moving Front of the State-of-the-Art of Contact Bonding.- Basics of Silicon-on-Insulator (SOI) Technology.- Silicon-on-Insulator by the Smart CutTM Process.- ELTRAN® Technology Based on Wafer Bonding and Porous Silicon.- Wafer Bonding for High-Performance Logic Applications.- Application of Bonded Wafers to the Fabrication of Electronic Devices.- Compound Semiconductor Heterostructures by Smart CutTM: SiC-on-Insulator, QUASICTM Substrates, InP and GaAs Heterostructures on Silicon.- Three-Dimensional Photonic Bandgap Crystals by Wafer Bonding Approach.- Wafer Direct Bonding for High-Brightness Light-Emitting Diodes and Vertical-Cavity Surface-Emitting Lasers.- High-Density Hybrid Integration of III--V Compound Optoelectronics with Silicon Integrated Circuits.- Layer Transfer by Bonding and Laser Lift-Off.- Single-Crystal Lithium Niobate Films by Crystal Ion Slicing.- Wafer Bonding of Ferroelectric Materials.- Debonding of Wafer-Bonded Interfaces for Handling and Transfer Applications.

Inhaltsverzeichnis

- Direct Bonding, Fusion Bonding, Anodic Bonding, Wafer Bonding: A Historical Patent Picture of the Worldwide Moving Front of the State-of-the-Art of Contact Bonding§- Basics of Silicon-on-Insulator (SOI) Technology§- Silicon-on-Insulator by the Smart CutTM Process§- ELTRAN Technology Based on Wafer Bonding and Porous Silicon§- Wafer Bonding for High-Performance Logic Applications§- Application of Bonded Wafers to the Fabrication of Electronic Devices§- Compound Semiconductor Heterostructures by Smart CutTM: SiC-on-Insulator, QUASICTM Substrates, InP and GaAs Heterostructures on Silicon§- Three-Dimensional Photonic Bandgap Crystals by Wafer Bonding Approach§- Wafer Direct Bonding for High-Brightness Light-Emitting Diodes and Vertical-Cavity Surface-Emitting Lasers§- High-Density Hybrid Integration of III--V Compound Optoelectronics with Silicon Integrated Circuits§- Layer Transfer by Bonding and Laser Lift-Off§- Single-Crystal Lithium Niobate Films by Crystal Ion Slicing§- Wafer Bonding of Ferroelectric Materials§- Debonding of Wafer-Bonded Interfaces for Handling and Transfer Applications.



Mehr über...
  • Mehr über:  Elektronik / Halbleiter, Halbleiter, Leitung (physikalisch) / Halbleiter, Leiterplatten, Optoelectronics, MEMS, Wafer bonding, Silicon-on-insulator, Compound semiconductors
  • Mehr von: 
  • Mehr von:  M. Alexe, U. Gösele, Springer-Verlag GmbH


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